Candidates must have a strong academic record in Electrical/Electronics Engineering. The detailed eligibility is as follows: For Junior Research Fellow (JRF): B.E/B.Tech with First Class (minimum 60% or 6.5 CGPA) in Electrical Engineering (EE) / Electrical and Electronics Engineering (EEE) / Electrical and Computers Engineering / Electrical and Instrumentation Engineering (EIE) with a valid GATE score. Preference: M.E/M.Tech in Power Electronics / Power Electronics and Drives or equivalent (First Class i.e. 60% or 6.5 CGPA) from a recognized University/Institute. For Project Associate – I: B.E/B.Tech with First Class (minimum 60% or 6.5 CGPA) in Electrical Engineering (EE) / Electrical and Electronics Engineering (EEE) / Electrical and Computers Engineering / Electrical and Instrumentation Engineering (EIE). Preference: M.E/M.Tech in Power Electronics / Power Electronics and Drives or equivalent Master’s degree (First Class i.e. 60% or 6.5 CGPA) from a recognized University/Institute. Additional Notes on Eligibility: For JRF, the GATE paper and subject of the qualifying degree must be related to the project discipline. Candidates should have strong fundamentals in power electronics, converter design, modulation strategies, simulation tools (MATLAB/Simulink, etc.), and hardware prototyping. Prior research experience in bidirectional DC-DC converters, Dual Active Bridge (DAB) topologies, or related areas will be an added advantage. Good communication skills, ability to work in a team, and enthusiasm for hardware development and publication are highly expected.

Shortlisting based on application and documents. Shortlisted candidates will be called for Offline Interview. Original documents will be verified at the time of interview.